MIR-Bose: “Mid- and far-IR optoelectronic devices based on Bose-Einstein condensation” is a FET-Open collaborative project funded by European Commission H2020 program. The MIR-Bose project has kick-started on January 1St, 2017 and will run for 4 years.
The MIR-Bose Project is coordinated by Raffaele Colombelli from the Paris Sud University (France) and mobolises 10 partners listed below:
- CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS (France)
- UNIVERSITAET REGENSBURG (Germany)
- FOUNDATION FOR RESEARCH AND TECHNOLOGY HELLAS (Greece)
- UNIVERSITA DI PISA (Italy)
- CONSIGLIO NAZIONALE DELLE RICERCHE (Italy)
- The Bose Einstein Condensation (BEC) Center
- The The Institute of Nanoscience (CNR-NANO)
- The Istituto Officina dei Materiali (IOM) of CNR
- UNIVERSITY OF LEEDS (United Kingdom)
- TEMATYS (France)
The Objectives of the Project:
Optoelectronic devices typically operate in the weak coupling regime between light and matter, for example in conventional lasers which rely on population inversion to achieve optical gain. Recently, however, there has been a surge of interest in quantum systems operating instead in the strong coupling regime, when the coupling strength of the light-matter interaction is so strong that new states – cavity polaritons – are created, that are partially light, and partially material excitation. In semiconductors, exciton-polaritons have been the most widely studied type of strongly coupled system. However, recently a new phenomenon has been realized exploiting intersubband transitions.
The resulting excitations are called intersubband polaritons, and they have two remarkable properties: (i) a bosonic character that is maintained up to high carrier densities since they are not restricted by the Mott transition limit; and, (ii) large Rabi splittings. Although the scientific community has explored the basic science of intersubband polaritons, their potential for future and innovative optoelectronic devices has been entirely untapped.
The goal of the MIR-BOSE project is to demonstrate novel intersubband optoelectronic devices operating in the strong coupling regime between light and matter. Ultimately, we aim at demonstrating an intersubband polariton laser. These new sources have the potential to impact a range of technologies and applications in the mid-IR and THz frequency ranges.
The Project details:
Topic(s): FETOPEN-01-2016-2017 – FET-Open research and innovation actions
call for proposal: H2020-FETOPEN-1-2016-2017
Funding scheme: RIA – Research and Innovation action
Project reference: 737017