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Growth of high mobility GaAs/AlGaAs 2D electron gases allows the achievement of conducting channels in which low T electron transport is ballistic over 10s of microns, and the observation of exotic quantum transport phenomena. The figure shows an example of a quantum device: a) Schematic representation of a GaAs/AlGaAs quantum ring with flux through the center and the two different phases accumulated in both arms of the ring. b) AFM images and high-field oscillations of 3 rings (Nature Physics 6, 173 (2010).